Temperature Dependent IR-Drop Analysis in Graphene Nanoribbon Based Power Interconnect

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Title	Temperature Dependent IR-Drop Analysis in Graphene Nanoribbon Based Power Interconnect
Authors	Bhattacharya, S. Das, D. Rahaman, H.
ORCID
Keywords	Graphene nanoribbon (GNR) Temperature Peak-IR-Drop Effective-MFP (mean free path) Interconnect
Type	Article
Date of Issue	2016
URI	http://essuir.sumdu.edu.ua/handle/123456789/44796
Publisher	Sumy State University
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Citation	S. Bhattacharya, D. Das, H. Rahaman, J. Nano- Electron. Phys. 8 No 1, 01001 (2016)
Abstract	The paper proposes a temperature dependent resistive model of graphene nanoribbon (GNR) based power interconnects. Using the proposed model, IR-drop analysis for 16nm technology node latest by ITRS is performed. For a temperature range from 150 K to 450 K, the variation of resistance of GNR interconnect is ~ 2-5 × times lesser than that of traditional copper based power interconnects. Our analysis shows that GNR based power interconnects can show ~ 2-3 times reduction in Peak IR-drop as compared with copper based interconnects for local, intermediate and global interconnects.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)