Comparison of Three Dimensional Partially and Fully Depleted SOI MOSFET Characteristics Using Mathcad

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Title	Comparison of Three Dimensional Partially and Fully Depleted SOI MOSFET Characteristics Using Mathcad
Authors	Goel, Neha Pandey, Manoj Kumar
ORCID
Keywords	Silicon on insulator (SOI) Poisson’s Equation Front surface potential Threshold voltage Electric field Drain Current
Type	Article
Date of Issue	2016
URI	http://essuir.sumdu.edu.ua/handle/123456789/44880
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Neha Goel, Manoj Kumar Pandey, J. Nano- Electron. Phys. 8 No 1, 01041 (2016)
Abstract	In this Paper, comparison of three Dimensional characteristics between partially and fully depleted Silicon-On-Insulator (SOI MOSFET) is presented, this is done through 3D device modeling using mathcad, based on the numerical solution of three dimensional Poisson’s equation. Behavior of Various Parameters like Surface Potential, Threshold Voltage, Electric field and Drain current are presented in this paper.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)