Fabrication of β-Silicon Carbide Nanowires from Carbon Powder and Silicon Wafer

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/45463

Or use following links to share this resource in social networks: Recommend this item

Title	Fabrication of β-Silicon Carbide Nanowires from Carbon Powder and Silicon Wafer
Authors	Al-Ruqeishi, S. Majid Mohiuddin, Tariq
ORCID
Keywords	Carbo-thermal technique SiC Nanowires Nano-Optics
Type	Article
Date of Issue	2016
URI	http://essuir.sumdu.edu.ua/handle/123456789/45463
Publisher	Sumy State University
License
Citation	Majid S. Al-Ruqeishi, Tariq Mohiuddin, J. Nano- Electron. Phys. 8 No 2, 02001 (2016)
Abstract	β-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and carbon powder only. The obtained β-SiCNWs were short and thick with random distribution over Si wafer surface when rapid heating rate is applied. While β-SiCNWs fabricated under low heating rate are 57.0±3.0 nm in average diameter and few millimeters in length. An ambient Ar gas flow rates were found to be critical in the growth yield of resultant β-SiC nanowires. XRD diffraction patterns and FTIR spectrum reveals the composition structure of theses wires.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)