An Analytical Universal Model for Symmetric Double Gate Junctionless Transistors

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Title	An Analytical Universal Model for Symmetric Double Gate Junctionless Transistors
Authors	Bora, N. Das, P. Subadar, R.
ORCID
Keywords	Double Gate (DG) junctionless MOSFET Drain current model Surface potentia Semiconductor device modelling Threshold voltage variation TCAD Simulation
Type	Article
Date of Issue	2016
URI	http://essuir.sumdu.edu.ua/handle/123456789/45465
Publisher	Sumy State University
License	Copyright not evaluated
Citation	N. Bora, P. Das, R. Subadar, J. Nano- Electron. Phys. 8 No 2, 02003 (2016)
Abstract	An analytical surface potential based universal model for the drain current voltage characteristics of Symmetric Double gate (DG) junctionless field effect transistors is presented. This novel universal model is valid for all operating regions from depletion to inversion regions of operations. The primary conduction mechanism is governed by the bulk current where the channel becomes fully depleted in turning it off. This model has been validated by using TCAD device simulating software. The comparison shows high accuracy of the proposed model.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)