Influence of the SHI Irradiation on the XRD, AFM, and Electrical Properties of CdSe Thin Films

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Title	Influence of the SHI Irradiation on the XRD, AFM, and Electrical Properties of CdSe Thin Films
Authors	Singh, R. Srinivasan, R.
ORCID
Keywords	CdSe thin films SHI XRD AFM I-V
Type	Article
Date of Issue	2016
URI	http://essuir.sumdu.edu.ua/handle/123456789/45518
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Rajesh Singh, Radha Srinivasan, J. Nano- Electron. Phys. 8 No 2, 02036 (2016)
Abstract	Cadmium Selinide (CdSe) thin films prepared by thermal evaporation on glass substrates were irradiated with swift (100 MeV) Ni+7 ions at fluences of 1 × 1011 and 1 × 1012 cm – 2. The structural changes with respect to increasing fluence were observed by the means of X-ray diffraction (XRD). The modification in surface morphology and electrical properties has been analyzed as a function of fluence using XRD, AFM and I-V techniques. The AFM micrographs of irradiated thin films show the formation of small spherical grains and decrease in surface roughness with increasing fluence as well as I-V measurement revels that decrease in resistivity with increasing fluence.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)