Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor

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Title	Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor
Authors	Rogachev, I.A. Knyazkov, A.V. Meshkov, O.I. Kurochka, A.S.
ORCID
Keywords	Gallium nitride Ohmic contacts Encapsulation Gate AlGaN / GaN HEMT
Type	Article
Date of Issue	2016
URI	http://essuir.sumdu.edu.ua/handle/123456789/45575
Publisher	Sumy State University
License	Copyright not evaluated
Citation	I.A. Rogachev, A.V. Knyazkov, O.I. Meshkov, A.S. Kurochka, J. Nano- Electron. Phys. 8 No 2, 02044 (2016)
Abstract	Reported about study of processes of formation of Ti / Al / Ni / Au ohmic contacts to heterostructures AlGaN / GaN and gate Ni / Au. Investigated of process recess the semiconductor layer for minimum resistance of ohmic contact – 0.4 Ohm·mm. Studied influence of encapsulation ohmic contacts on their surface morphology.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)