Thermodynamics of Nucleation of Silicon Carbide Nanocrystals during Carbonization of Porous Silicon

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/46945

Or use following links to share this resource in social networks: Recommend this item

Title	Thermodynamics of Nucleation of Silicon Carbide Nanocrystals during Carbonization of Porous Silicon
Authors	Nagornov, Yu.S.
ORCID
Keywords	thermodynamics of nucleation SiC nanocrystals high-temperature carbonization porous silicon monte carlo simulation
Type	Article
Date of Issue	2016
URI	http://essuir.sumdu.edu.ua/handle/123456789/46945
Publisher	Sumy State University
License
Citation	Nagornov, Yu.S. Thermodynamics of Nucleation of Silicon Carbide Nanocrystals during Carbonization of Porous Silicon [Текст] / Yu.S. Nagornov // Журнал нано- та електронної фізики. - 2016. - Т.8, №3. - 03001
Abstract	The formation of SiC nanocrystals of the cubic modification in the process of high-temperature carbonization of porous silicon has been analyzed. It has been shown that the surface energy of silicon nanoparticles and quantum filaments is released in the process of annealing and carbonization. The Monte Carlo simulation has shown that the released energy makes it possible to overcome the nucleation barrier and to form SiC nanocrystals.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)