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Title | Carrier Scattering Mechanisms in Bismuth Films Doped with Tellurium |
Authors |
Matveev, D.Yu.
|
ORCID | |
Keywords |
thin films bismuth tellurium mobility size effect |
Type | Article |
Date of Issue | 2016 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/47285 |
Publisher | Sumy State University |
License | |
Citation | Matveev, D.Yu. Carrier Scattering Mechanisms in Bismuth Films Doped with Tellurium [Текст] / D.Yu. Matveev // Журнал нано- та електронної фізики. - 2016. - Т.8, №3. - 03012 |
Abstract |
The article compares carrier mobility in monocrystals, as well as monocrystal and block films of different width thus defining carrier contribution to interaction with phonons, surface, boundaries and structural defects of crystallites in bismuth films doped with tellurium. It is determined that there is a linear dependence of inverse electron mobility on inverse width of bismuth film doped with tellurium. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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File | Size | Format | Downloads |
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Matveev_ thin_films.pdf | 451 kB | Adobe PDF | 1647454457 |
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