Carrier Scattering Mechanisms in Bismuth Films Doped with Tellurium

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/47285

Or use following links to share this resource in social networks: Recommend this item

Title	Carrier Scattering Mechanisms in Bismuth Films Doped with Tellurium
Authors	Matveev, D.Yu.
ORCID
Keywords	thin films bismuth tellurium mobility size effect
Type	Article
Date of Issue	2016
URI	http://essuir.sumdu.edu.ua/handle/123456789/47285
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Matveev, D.Yu. Carrier Scattering Mechanisms in Bismuth Films Doped with Tellurium [Текст] / D.Yu. Matveev // Журнал нано- та електронної фізики. - 2016. - Т.8, №3. - 03012
Abstract	The article compares carrier mobility in monocrystals, as well as monocrystal and block films of different width thus defining carrier contribution to interaction with phonons, surface, boundaries and structural defects of crystallites in bismuth films doped with tellurium. It is determined that there is a linear dependence of inverse electron mobility on inverse width of bismuth film doped with tellurium.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)