Influence of the Composition on the Thermoelectric and Electro-physical Properties of Ge-Sb-Te Thin Films for Phase Change Memory Application

Lazarenko, P.I.; Sherchenkov, A.A.; Kozyukhin, S.A.; Terekhov, D.Y.; Yakubov, A.O.; Babich, A.V.; Shuliatyev, A.S.; Sagunova, I.V.; Redichev, E.N.

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Title	Influence of the Composition on the Thermoelectric and Electro-physical Properties of Ge-Sb-Te Thin Films for Phase Change Memory Application
Authors	Lazarenko, P.I. Sherchenkov, A.A. Kozyukhin, S.A. Terekhov, D.Y. Yakubov, A.O. Babich, A.V. Shuliatyev, A.S. Sagunova, I.V. Redichev, E.N.
ORCID
Keywords	phase change memory Ge-Sb-Te quasi-binary line GeTe-Sb[2]Te[3] seebeck coefficient electrophysical properties
Type	Article
Date of Issue	2016
URI	http://essuir.sumdu.edu.ua/handle/123456789/47493
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Influence of the Composition on the Thermoelectric and Electro-physical Properties of Ge-Sb-Te Thin Films for Phase Change Memory Application [Текст] / P.I. Lazarenko, A.A. Sherchenkov, S.A. Kozyukhin [et al.] // Журнал нано- та електронної фізики. - 2016. - Т.8, №3. - 03033
Abstract	Influence of the composition variation along the quasi-binary line GeTe-Sb[2]Te[3] on the thermoelectric and electro-physical properties of thin films was investigated. GST amorphous thin films have high Seebeck coefficients, which drops nearly on the order of magnitude after the crystallization. Temperature dependences of the resistivities were studied, and it was determined that crystallization temperature increases with moving along the quasi-binary line GeTe-Sb[2]Te[3] from GeSb[4]Te[7] to GeSb[2]Te[4], and then to Ge[2]Sb[2]Te[5], while the phase transition temperature range decreases. Current-voltage characteristics of amorphous thin films have three voltage ranges with different dependencies due to the different mechanisms of charge carrier transport.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)