Femtosecond Laser Crystallization of Boron-doped Amorphous Hydrogenated Silicon Films

Rybalko, P.D.; Khenkin, M.V.; Forsh, P.A.; Drevinskas, R.; Matsukatova, A.N.; Kazansky, P.; Kazanskii, A.G.

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Title	Femtosecond Laser Crystallization of Boron-doped Amorphous Hydrogenated Silicon Films
Authors	Rybalko, P.D. Khenkin, M.V. Forsh, P.A. Drevinskas, R. Matsukatova, A.N. Kazansky, P. Kazanskii, A.G.
ORCID
Keywords	semiconductors thin films amorphous hydrogenated silicon femtosecond laser crystallization raman spectra conductivity
Type	Article
Date of Issue	2016
URI	http://essuir.sumdu.edu.ua/handle/123456789/47500
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Femtosecond Laser Crystallization of Boron-doped Amorphous Hydrogenated Silicon Films [Текст] / P.D. Rybalko, M.V. Khenkin, P.A. Forsh [et al.] // Журнал нано- та електронної фізики. - 2016. - Т.8, №3. - 03038
Abstract	Crystallization of amorphous hydrogenated silicon films with femtosecond laser pulses is one of the promising ways to produce nanocrystalline silicon for photovoltaics. The structure of laser treated films is the most important factor determining materials' electric and photoelectric properties. In this work we investigated the effect of femtosecond laser irradiation of boron doped amorphous hydrogenated silicon films with different fluences on crystalline volume fraction and electrical properties of this material. A sharp increase of conductivity and essential decrease of activation energy of conductivity temperature dependences accompany the crystallization process. The results obtained are explained by increase of boron doping efficiency in crystalline phase of modified silicon film.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)