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Title | Femtosecond Laser Crystallization of Boron-doped Amorphous Hydrogenated Silicon Films |
Authors |
Rybalko, P.D.
Khenkin, M.V. Forsh, P.A. Drevinskas, R. Matsukatova, A.N. Kazansky, P. Kazanskii, A.G. |
ORCID | |
Keywords |
semiconductors thin films amorphous hydrogenated silicon femtosecond laser crystallization raman spectra conductivity |
Type | Article |
Date of Issue | 2016 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/47500 |
Publisher | Sumy State University |
License | |
Citation | Femtosecond Laser Crystallization of Boron-doped Amorphous Hydrogenated Silicon Films [Текст] / P.D. Rybalko, M.V. Khenkin, P.A. Forsh [et al.] // Журнал нано- та електронної фізики. - 2016. - Т.8, №3. - 03038 |
Abstract |
Crystallization of amorphous hydrogenated silicon films with femtosecond laser pulses is one of the promising ways to produce nanocrystalline silicon for photovoltaics. The structure of laser treated films is the most important factor determining materials' electric and photoelectric properties. In this work we investigated the effect of femtosecond laser irradiation of boron doped amorphous hydrogenated silicon films
with different fluences on crystalline volume fraction and electrical properties of this material. A sharp increase of conductivity and essential decrease of activation energy of conductivity temperature dependences accompany the crystallization process. The results obtained are explained by increase of boron doping efficiency in crystalline phase of modified silicon film. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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File | Size | Format | Downloads |
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Rybalko_ semiconductors.pdf | 297.48 kB | Adobe PDF | -1932133161 |
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