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Title Substructural Properties and Anisotropic Peak Broadening in Zn(1-x)MnxTe Films Determined by a Combined Methodology Based on SEM, HRTEM, XRD, and HRXRD
Authors Martinez-Tomas, С.
Klymov, Oleksii Volodymyrovych
Agouram, S.
Kurbatov, Denys Ihorovych  
Opanasiuk, Anatolii Serhiiovych  
Muñoz-Sanjosé, V.
ORCID http://orcid.org/0000-0002-2754-6367
http://orcid.org/0000-0002-1888-3935
Keywords плівки
пленки
films
деформація решітки
деформация решетки
Lattice deformation
Zn1-xMnxTe
протяжні дефекти
протяженные дефекты
extended defects
Type Article
Date of Issue 2016
URI http://essuir.sumdu.edu.ua/handle/123456789/48467
Publisher Springer
License
Citation Substructural Properties and Anisotropic Peak Broadening in Zn(1-x)MnxTe Films Determined by a Combined Methodology Based on SEM, HRTEM, XRD, and HRXRD [Текст] / C. Martinez-Tomas, O. Klymov, S. Agouram [et al] // Metallurgical And Materials Transactions A. - Dec 2016. - Vol. 47, Issue 12. - P. 6645–6654
Abstract Lattice deformation and extended defects such as grain boundaries and dislocations affect the crystalline quality of films and can dramatically change material’s properties. In particular, magnetic and optoelectronic properties depend strongly on these structural and substructural characteristics. In this paper, a combined methodology based on SEM, HRTEM, XRD, and HRXRD measurements is used to determine and assess the structural and substructural characteristics of films. This combined methodology has been applied to Zn1-xMnxTe films grown on glass substrates by close-spaced vacuum sublimation. Nevertheless the methodology can be applied to a wide variety of materials and could become a useful characterization method which would be particularly valuable in semiconductor growth field. The knowledge of the structural and substructural characteristics can allow not only the optimization of growth parameters, but also the selection of specific samples having the desired characteristics (crystallite size, minimum dislocation content, etc.) for high-quality technological devices.
Appears in Collections: Наукові роботи студентів, магістрів, аспірантів (ЕлІТ)

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