Modeling of Schottky Barrier Height and Volt-Amper Characteristics for Transition Metal-solid Solution (SіC)1 – x(AlN)x

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Title	Modeling of Schottky Barrier Height and Volt-Amper Characteristics for Transition Metal-solid Solution (SіC)1 – x(AlN)x
Authors	Altukhov, V.I. Bilalov, B.A. Sankin, A.V. Filipova, S.V.
ORCID
Keywords	Schottky barrier Silicon carbide Solid solutions Volt-amper characteristics Metalsemiconductor transitions
Type	Article
Date of Issue	2016
URI	http://essuir.sumdu.edu.ua/handle/123456789/48770
Publisher	Sumy State University
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Citation	V.I. Altukhov, B.A. Bilalov, A.V. Sankin, S.V. Filipova, J. Nano- Electron. Phys. 8 No 4(1), 04003 (2016)
Abstract	Proposed nonlinear defect concentration model of metal-semiconductor contact. It is shown that taking into account nonlinear dependence of the Fermi energy EF defect concentration leads to higher barrier Schottky in 15-25 %. Calculated Volt-Amper characteristics of the diodes are consistent with experiment.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)