Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices

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Title	Investigating the Temperature Effects on ZnO, TiO2, WO3 and HfO2 Based Resistive Random Access Memory (RRAM) Devices
Authors	Dongale, T.D . Khot, K.V. Mohite, S.V. Khandagale, S.S. Shinde, S.S. Patil, V.L. Vanalkar, S.A. Moholkar, A.V. Rajpure, K.Y. Bhosale, P.N. Patil, P.S. Gaikwad, P.K. Kamat, R.K.
ORCID
Keywords	RRAM Thermal reaction model Reliability Nanoelectronics
Type	Article
Date of Issue	2016
URI	http://essuir.sumdu.edu.ua/handle/123456789/49557
Publisher	Sumy State University
License	Copyright not evaluated
Citation	T.D. Dongale, K.V. Khot, S.V. Mohite, et al., J. Nano- Electron. Phys. 8 No 4(1), 04030 (2016)
Abstract	In this paper, we report the effect of filament radius and filament resistivity on the ZnO, TiO2, WO3 and HfO2 based Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis. The results substantiate decrease in saturated temperature with increase in the radius and resistivity of filament for the investigated RRAM devices. Moreover, a sudden change in the saturated temperature at a lower value of filament radius and resistivity is observed as against the steady change at the medium and higher value of the filament radius and resistivity. Results confirm the dependence of saturated temperature on the filament size and resistivity in RRAM.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)