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Title | CNTFET-Based Design of a High-Efficient Full Adder Using XOR Logic |
Authors |
Hatefinasab, Seyedehsomayeh
|
ORCID | |
Keywords |
CNTFET Full adder Low power XOR logic PDP (Power Delay Product) |
Type | Article |
Date of Issue | 2016 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/49902 |
Publisher | Sumy State University |
License | |
Citation | Seyedehsomayeh Hatefinasab, J. Nano- Electron. Phys. 8 No 4(2), 04061 (2016) |
Abstract |
This paper presents a new low power and high speed full adder based on Carbon Nano Tube Field Effect Transistor (CNTFET) technology. This proposed full adder is based on a XOR logic function using 32 nm CNTFET technology. The MOSFET-like CNTFET is applied in this paper to use CMOS (Complementary Metal Oxide Semiconductor) logic gate. The better structure of CNTFET transistors can improve the performance of full adder based on CNTFET technology [1]. The proposed full adder is simulated in different frequencies, various supply voltages, temperatures and load capacitances to prove better performance in different conditions using the Synopsys HSPICE simulator software in comparison with previous full adders in CNTFET technology. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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Algeria
1
China
38538933
Finland
1
France
1
Germany
38538932
India
124485
Ireland
395793
Lithuania
1
Singapore
132624820
Switzerland
1
Ukraine
21530915
United Kingdom
2792897
United States
188171767
Unknown Country
65
Vietnam
1
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File | Size | Format | Downloads |
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Hatefinasab.pdf | 810 kB | Adobe PDF | 422718613 |
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