Please use this identifier to cite or link to this item:
http://essuir.sumdu.edu.ua/handle/123456789/49902
Or use following links to share this resource in social networks:
Tweet
Recommend this item
Title | CNTFET-Based Design of a High-Efficient Full Adder Using XOR Logic |
Authors |
Hatefinasab, Seyedehsomayeh
|
ORCID | |
Keywords |
CNTFET Full adder Low power XOR logic PDP (Power Delay Product) |
Type | Article |
Date of Issue | 2016 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/49902 |
Publisher | Sumy State University |
License | Copyright not evaluated |
Citation | Seyedehsomayeh Hatefinasab, J. Nano- Electron. Phys. 8 No 4(2), 04061 (2016) |
Abstract |
This paper presents a new low power and high speed full adder based on Carbon Nano Tube Field Effect Transistor (CNTFET) technology. This proposed full adder is based on a XOR logic function using 32 nm CNTFET technology. The MOSFET-like CNTFET is applied in this paper to use CMOS (Complementary Metal Oxide Semiconductor) logic gate. The better structure of CNTFET transistors can improve the performance of full adder based on CNTFET technology [1]. The proposed full adder is simulated in different frequencies, various supply voltages, temperatures and load capacitances to prove better performance in different conditions using the Synopsys HSPICE simulator software in comparison with previous full adders in CNTFET technology. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
Views

1

1

1

1

38538933

1

4

3

1

1

1

630396

1

1

1

1

1062897

10766217

4522900

132624816

188171766

25541
Downloads

1

38538933

1

1

38538932

124485

395793

1

132624820

1

21530915

2792897

188171767

65

1
Files
File | Size | Format | Downloads |
---|---|---|---|
Hatefinasab.pdf | 810 kB | Adobe PDF | 422718613 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.