Quantum Mechanical Analysis of GaN Nanowire Transistor for High Voltage Applications

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Title	Quantum Mechanical Analysis of GaN Nanowire Transistor for High Voltage Applications
Authors	Chatterjee, Neel Pandey, Sujata
ORCID
Keywords	Quantum mechanical Nanowire High k gate dielectric
Type	Article
Date of Issue	2016
URI	http://essuir.sumdu.edu.ua/handle/123456789/49910
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Neel Chatterjee, Sujata Pandey, J. Nano- Electron. Phys. 8 No 4(2), 04063 (2016)
Abstract	The paper presents the quantum mechanical analysis of Gallium Nitride nanowire transistor. The effect of high k gate dielectric and different gate metals on the electrical characteristics of the device is studied. Nanowire width has been reduced to have a proper control on the device characteristics at reduced gate length. A high value of drain current is obtained at gate length of 10 nm and nanowire radius equal to 10 nm, is obtained. Also high voltage operation of the device upto 40 volts has been shown. A flatter transconductance curve is obtained which shows the linearity of the device. The results obtained are comparable with the experimental and simulated data reported in literature.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)