Photovoltaic Effect of SnS/CdS Heterostructure

Yeromenko, Yurii Serhiiovych; Возний, Андрій Андрійович; Voznyi, Andrii Andriiovych; Kosiak, Volodymyr Volodymyrovych; Shpetnyi, Ihor Oleksandrovych; Kolesnyk, Maksym Mykolaiovych; Opanasiuk, Anatolii Serhiiovych

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Title	Photovoltaic Effect of SnS/CdS Heterostructure
Authors	Yeromenko, Yurii Serhiiovych Возний, Андрій Андрійович Voznyi, Andrii Andriiovych Kosiak, Volodymyr Volodymyrovych Shpetnyi, Ihor Oleksandrovych Kolesnyk, Maksym Mykolaiovych Opanasiuk, Anatolii Serhiiovych
ORCID	http://orcid.org/0000-0002-9153-8097 http://orcid.org/0000-0002-6124-4696 http://orcid.org/0000-0003-2019-8387 http://orcid.org/0000-0002-1888-3935
Keywords	фазовий склад фазовый состав phase composition тонкі плівки тонкие пленки thin films SnS CdS гетероструктура heterostructure
Type	Article
Date of Issue	2017
URI	http://essuir.sumdu.edu.ua/handle/123456789/65644
Publisher
License	Copyright not evaluated
Citation	Photovoltaic Effect of SnS/CdS Heterostructure / A. Voznyi, Yu. Yeromenko, V. Kosyak [et al.] // Application & Properties '2017: 7th International Conference on Nanomaterials, September 10–15, 2017. - 2017. - Odesa.
Abstract	Tin sulphide is a promising absorber material for low-cost and earth abundant thin film solar cells. In this regard, we have studied phase composition, structural, and electrical properties of n-CdS/p-SnS heterostructure obtained by the close spaced vacuum sublimation (CSS) method. Surface and cross- sectional morphology of the structure were studied by using of field emission scanning electron microscope (FESEM). Thickness of the layers (450 nm for SnS and 550 nm for CdS) and growth mechanism were determined directly from heterostructure cross- section. Crystal structure and films purity were studied by X-ray diffraction (XRD) and Raman spectroscopy methods. The light current density-voltage (J-V) characteristic showed small photovoltaic effect with an open-circuit voltage (Voc) of 0.058 mV, a short circuit current density (Jsc) of 3.83 mA/cm2, a fill factor (FF) of 0.41 and an efficiency (n) of 0.092 %.
Appears in Collections:	Наукові видання (ЕлІТ)