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Title Photovoltaic Effect of SnS/CdS Heterostructure
Authors Yeromenko, Yurii Serhiiovych  
Возний, Андрій Андрійович
Voznyi, Andrii Andriiovych
Kosiak, Volodymyr Volodymyrovych
Shpetnyi, Ihor Oleksandrovych  
Kolesnyk, Maksym Mykolaiovych  
Opanasiuk, Anatolii Serhiiovych  
ORCID http://orcid.org/0000-0002-9153-8097
http://orcid.org/0000-0002-6124-4696
http://orcid.org/0000-0003-2019-8387
http://orcid.org/0000-0002-1888-3935
Keywords фазовий склад
фазовый состав
phase composition
тонкі плівки
тонкие пленки
thin films
SnS
CdS
гетероструктура
heterostructure
Type Article
Date of Issue 2017
URI http://essuir.sumdu.edu.ua/handle/123456789/65644
Publisher
License
Citation Photovoltaic Effect of SnS/CdS Heterostructure / A. Voznyi, Yu. Yeromenko, V. Kosyak [et al.] // Application & Properties '2017: 7th International Conference on Nanomaterials, September 10–15, 2017. - 2017. - Odesa.
Abstract Tin sulphide is a promising absorber material for low-cost and earth abundant thin film solar cells. In this regard, we have studied phase composition, structural, and electrical properties of n-CdS/p-SnS heterostructure obtained by the close spaced vacuum sublimation (CSS) method. Surface and cross- sectional morphology of the structure were studied by using of field emission scanning electron microscope (FESEM). Thickness of the layers (450 nm for SnS and 550 nm for CdS) and growth mechanism were determined directly from heterostructure cross- section. Crystal structure and films purity were studied by X-ray diffraction (XRD) and Raman spectroscopy methods. The light current density-voltage (J-V) characteristic showed small photovoltaic effect with an open-circuit voltage (Voc) of 0.058 mV, a short circuit current density (Jsc) of 3.83 mA/cm2, a fill factor (FF) of 0.41 and an efficiency (n) of 0.092 %.
Appears in Collections: Наукові видання (ЕлІТ)

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