Optical Properties of Pure and Eu Doped ZnSe Films Deposited by CSVS Technique

Ivashchenko, Maksym Mykolaiovych; Opanasiuk, Anatolii Serhiiovych; Buryk, Ivan Petrovych; Lutsenko, V.A.; Shevchenko, A.V.

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Title	Optical Properties of Pure and Eu Doped ZnSe Films Deposited by CSVS Technique
Authors	Ivashchenko, Maksym Mykolaiovych Opanasiuk, Anatolii Serhiiovych Buryk, Ivan Petrovych Lutsenko, V.A. Shevchenko, A.V.
ORCID	http://orcid.org/0000-0002-4611-0956 http://orcid.org/0000-0002-1888-3935 http://orcid.org/0000-0003-4520-4296
Keywords	оптичні властивості вакуумна сублімація коефіцієнт пропускання ширина забороненої зони оптические свойства вакуумная сублимация коэффициент пропускания запрещенная зона optical properties vacuum sublimation transmittance band gap
Type	Article
Date of Issue	2017
URI	http://essuir.sumdu.edu.ua/handle/123456789/65651
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Optical Properties of Pure and Eu Doped ZnSe Films Deposited by CSVS Technique [Текст] / M.M. Ivashchenko, A.S. Opanasyuk, I.P. Buryk [et al.] // Журнал нано- та електронної фізики. - 2017. - Т.9, № 1. - 01011. - DOI: 10.21272/jnep.9(1).01011.
Abstract	Pure (ZnSe) and europium doped (ZnSe:Eu) zinc selenide films were evaporated onto glass substrates using the close-spaced vacuum sublimation (CSVS) technique at different deposition conditions (substrate temperature). The fundamental optical parameters such as optical density, extinction coefficient, refraction index, real and imaginary parts of optical dielectric constant, band gap were evaluated in transparent region of transmittance and absorbance spectrum. Optical spectroscopy analysis shown that in both cases deposited films had a high level of transmittance values (55-65 % for ZnSe films and 80-90 % for ZnSe:Eu films). Moreover, evaluated values of the films optical band gap were in the range of Eg = (2.63-2.69) eV for ZnSe films and Eg = (2.77-2.81) eV for ZnSe:Eu for films with increasing of the films substrate temperature. Fourier-transformed infra-red (FTIR) analysis of deposited ZnSe and ZnSe:Eu films shown that all investigated samples are well-crystalline and identified vibrations are typical for II-VI semiconductors.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)