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Title | Optical Properties of Pure and Eu Doped ZnSe Films Deposited by CSVS Technique |
Authors |
Ivashchenko, Maksym Mykolaiovych
![]() Opanasiuk, Anatolii Serhiiovych ![]() Buryk, Ivan Petrovych ![]() Lutsenko, V.A. Shevchenko, A.V. |
ORCID |
http://orcid.org/0000-0002-4611-0956 http://orcid.org/0000-0002-1888-3935 http://orcid.org/0000-0003-4520-4296 |
Keywords |
оптичні властивості вакуумна сублімація коефіцієнт пропускання ширина забороненої зони оптические свойства вакуумная сублимация коэффициент пропускания запрещенная зона optical properties vacuum sublimation transmittance band gap |
Type | Article |
Date of Issue | 2017 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/65651 |
Publisher | Sumy State University |
License | Copyright not evaluated |
Citation | Optical Properties of Pure and Eu Doped ZnSe Films Deposited by CSVS Technique [Текст] / M.M. Ivashchenko, A.S. Opanasyuk, I.P. Buryk [et al.] // Журнал нано- та електронної фізики. - 2017. - Т.9, № 1. - 01011. - DOI: 10.21272/jnep.9(1).01011. |
Abstract |
Pure (ZnSe) and europium doped (ZnSe:Eu) zinc selenide films were evaporated onto glass substrates
using the close-spaced vacuum sublimation (CSVS) technique at different deposition conditions (substrate
temperature). The fundamental optical parameters such as optical density, extinction coefficient, refraction index, real and imaginary parts of optical dielectric constant, band gap were evaluated in transparent
region of transmittance and absorbance spectrum. Optical spectroscopy analysis shown that in both cases
deposited films had a high level of transmittance values (55-65 % for ZnSe films and 80-90 % for ZnSe:Eu
films). Moreover, evaluated values of the films optical band gap were in the range of Eg = (2.63-2.69) eV for
ZnSe films and Eg = (2.77-2.81) eV for ZnSe:Eu for films with increasing of the films substrate temperature. Fourier-transformed infra-red (FTIR) analysis of deposited ZnSe and ZnSe:Eu films shown that all
investigated samples are well-crystalline and identified vibrations are typical for II-VI semiconductors. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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jnep_V9_01011.pdf | 785.73 kB | Adobe PDF | 576893721 |
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