Analog Behavioral Modeling of Schottky Diode Using Spice

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Title	Analog Behavioral Modeling of Schottky Diode Using Spice
Authors	Messaadi, L. Dibi, Z.
ORCID
Keywords	Silicon carbide Reverse recovery Schottky diode Temperature effect Modeling pspice ABM Characterization
Type	Article
Date of Issue	2017
URI	http://essuir.sumdu.edu.ua/handle/123456789/65698
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Messaadi, L. Analog Behavioral Modeling of Schottky Diode Using Spice [Текст] / L. Messaadi, Z. Dibi // Журнал нано- та електронної фізики. - 2017. - Т.9, № 1. - 01002. - DOI: 10.21272/jnep.9(1).01002.
Abstract	This paper presents a SiC Schottky diode model including static and dynamic features implemented as a parameterized block constructed from SPICE Analog Behavioral Modeling (ABM) controlled sources. The parameters for this block are easy to extract, even from readily available diode data sheet information. This model can easily simulate the diode’s reverse recovery and power losses behavior over all temperatures from 0 °C to 175 °C.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)