Please use this identifier to cite or link to this item:
http://essuir.sumdu.edu.ua/handle/123456789/65702
Or use following links to share this resource in social networks:
Tweet
Recommend this item
Title | Assessment of the H2 Followed by Air Sintering of Co-doped In[2]O[3] Based Diluted Magnetic Semiconductors |
Authors |
Mukherji, R.
Mathur, V. Samariya, A. Mukherji, M. |
ORCID | |
Keywords |
Diluted magnetic semiconductors Transition metals In2O3 |
Type | Article |
Date of Issue | 2017 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/65702 |
Publisher | Sumy State University |
License | Copyright not evaluated |
Citation | Assessment of the H2 Followed by Air Sintering of Co-doped In[2]O[3] Based Diluted Magnetic Semiconductors [Текст] / R. Mukherji, V. Mathur, A. Samariya, M. Mukherji // Журнал нано- та електронної фізики. – 2017. – Т.9, № 2. – 02003. – DOI: 10.21272/jnep.9(2).02003. |
Abstract |
The study shows the influence of Co doping, sintering in hydrogen atmosphere and re-heating on magnetic
properties of In2O3.The In0.97Co0.03O samples were prepared by solid state reaction method. XRD patterns shows that Co ions take position of at the In3+ sites. The investigations at room temperature (RT) concludes that the Co doped In2O3 sample had achieved overlapped paramagnetic (PM) properties conquering the diamagnetic
(DM) properties of In2O3. Additionally, it was found that the ferromagnetism (FM) is noticeably induced via H2-
annealing at 300 K. This study also depicts that the sample is finally reverted to the PM state after further
long sintering. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
Views

1273244

24500

1

1

6157

1

3078

1

1

97582

49001

728047

2182463

839
Downloads

1273245

1

1

182850

1

1273243

2182464

1
Files
File | Size | Format | Downloads |
---|---|---|---|
jnep_V9_02003_3.pdf | 377.73 kB | Adobe PDF | 4911806 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.