Please use this identifier to cite or link to this item:
http://essuir.sumdu.edu.ua/handle/123456789/65716
Or use following links to share this resource in social networks:
Tweet
Recommend this item
Title | Analytical Modeling & Simulation of OFF-State Leakage Current for Lightly Doped MOSFETs |
Authors |
Sachdeva, N.
Vashishath, M. Bansal, P.K. |
ORCID | |
Keywords |
MOSFET SS Threshold voltage SCEs |
Type | Article |
Date of Issue | 2017 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/65716 |
Publisher | Sumy State University |
License | Copyright not evaluated |
Citation | Sachdeva, N. Analytical Modeling & Simulation of OFF-State Leakage Current for Lightly Doped MOSFETs [Text] / N.Sachdeva, M. Vashishath, P.K. Bansal // Журнал нано- та електронної фізики. – 2017. – Т.9, №2. – 06009. - DOI: 10.21272/jnep.9(6).06009. |
Abstract |
Prior to the fabrication of Integrated circuits, the electrical parameters are analytically modeled &
simulated using any computer aided design tool. The ever increasing demand of the features of the electronic
appliances has forced to put more and more transistors in a small IC chip. The main target of the integrated
circuit design and fabrication is to achieve more functionality at higher speed using less power,
less area and low cost. Various parameters like threshold voltage, sub-threshold leakage current and subthreshold slope etc. are analytically derived and simulated to get match with each other. In this paper,
45 nm n-channel metal-oxide- semiconductor field effect transistor (NMOS) has been designed in SILVACO
tool to give low off state leakage current by increasing the work function of gate. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
Views

1

96908

717775

443

48455

1

1

1

359108

181139

4255935

20

6340
Downloads

1

2

6337

25357

1

1

717773

1

2845740

5666129

1
Files
File | Size | Format | Downloads |
---|---|---|---|
jnep_V9_02009_6.pdf | 623.25 kB | Adobe PDF | 9261343 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.