Memristor Effect in Ni/TiOx/p-Si/Ni and Ni/TiOx/p-Si/TiOx/Ni Heterojunctions

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Title	Memristor Effect in Ni/TiOx/p-Si/Ni and Ni/TiOx/p-Si/TiOx/Ni Heterojunctions
Authors	Skryshevsky, V.A. Kostiukevych, O.M. Lendiel, V.V. Tretyak, O.V.
ORCID
Keywords	Memristor Titanium oxide Schottky barrier Surface electronic states
Type	Article
Date of Issue	2017
URI	http://essuir.sumdu.edu.ua/handle/123456789/65782
Publisher	Sumy State University
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Citation	Memristor Effect in Ni/TiOx/p-Si/Ni and Ni/TiOx/p-Si/TiOx/Ni Heterojunctions [Текст] / V.A. Skryshevsky, O.M. Kostiukevych, V.V. Lendiel, O.V. Tretyak // Журнал нано- та електронної фізики. - 2017. - Т.9, № 1. - 01023. - DOI: 10.21272/jnep.9(1).01023.
Abstract	In present work we developed new memristive devices of sandwich-type Ni/TiOx/p-Si/Ni and planar one Ni/TiOx/p-Si/TiOx/Ni. A pinched hysteresis loop is observed for both device configurations and depends on supplementary illumination by UV/visual light. Besides classical model of migration of oxygen vacancies in titanium oxide we considers the impact of barrier modulation and recharging of surface states in TiOx/Si interface when voltage is applied to the structure in the dark or under illumination. The elaborated heterostructures show great potential as a low cost material for embedding memristive memory for large area electronics, compatible with Si CMOS process and can be managed by external illumination.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)