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Title | Resistive Switching Properties of Highly Transparent SnO[2]:Fe |
Authors |
Trivedi, S.J.
Joshi, U.S. |
ORCID | |
Keywords |
Resistance switching Tin oxide UV Vis spectroscopy RRAM |
Type | Article |
Date of Issue | 2017 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/65788 |
Publisher | Sumy State University |
License | Copyright not evaluated |
Citation | Trivedi, S.J. Resistive Switching Properties of Highly Transparent SnO[2]:Fe [Текст] / S.J. Trivedi, U.S. Joshi // Журнал нано- та електронної фізики. - 2017. - Т.9, № 1. - 01025. - DOI: 10.21272/jnep.9(1).01025. |
Abstract |
Fe doped SnO2 transparent thin film nanostructures were grown by chemical solution deposition and
its electric field induced resistive switching properties were investigated for non-volatile resistive random
access memory (RRAM) applications. Simple, low temperature solution process growth of SnO2:Fe thin film
nanostructures was employed. Grazing incidence X-ray diffraction (GIXRD) and atomic force microscopy
(AFM), respectively, confirmed a phase pure cubic growth with mono-disperse nanocrystallites of ~ 20 nm.
Sharp interface with substrate and top metal electrodes were achieved. Reproducible hysteresis in the I-V
curves with symmetrical resistance switching ratio of more than 4 • 103 at a low operating voltage of
± 1.1 V has been demonstrated. Large values of memory retention of about 5 moths; confirmed the nonvolatile
behaviour of the device cell consisting of Ag/SnO2:Fe/Ag planar structure. A mechanism involving
the space charge limited current combined with Schottky conduction at the metal/oxide interface is proposed.
A possible mechanism of the formation and rupture of conducting filament is proposed based on the
Joule heating effect with external electron injection at the Ag/SnO2 interface. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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File | Size | Format | Downloads |
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jnep_V9_01025.pdf | 523.56 kB | Adobe PDF | -558003859 |
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