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Title Resistive Switching Properties of Highly Transparent SnO[2]:Fe
Authors Trivedi, S.J.
Joshi, U.S.
ORCID
Keywords Resistance switching
Tin oxide
UV
Vis spectroscopy
RRAM
Type Article
Date of Issue 2017
URI http://essuir.sumdu.edu.ua/handle/123456789/65788
Publisher Sumy State University
License
Citation Trivedi, S.J. Resistive Switching Properties of Highly Transparent SnO[2]:Fe [Текст] / S.J. Trivedi, U.S. Joshi // Журнал нано- та електронної фізики. - 2017. - Т.9, № 1. - 01025. - DOI: 10.21272/jnep.9(1).01025.
Abstract Fe doped SnO2 transparent thin film nanostructures were grown by chemical solution deposition and its electric field induced resistive switching properties were investigated for non-volatile resistive random access memory (RRAM) applications. Simple, low temperature solution process growth of SnO2:Fe thin film nanostructures was employed. Grazing incidence X-ray diffraction (GIXRD) and atomic force microscopy (AFM), respectively, confirmed a phase pure cubic growth with mono-disperse nanocrystallites of ~ 20 nm. Sharp interface with substrate and top metal electrodes were achieved. Reproducible hysteresis in the I-V curves with symmetrical resistance switching ratio of more than 4 • 103 at a low operating voltage of ± 1.1 V has been demonstrated. Large values of memory retention of about 5 moths; confirmed the nonvolatile behaviour of the device cell consisting of Ag/SnO2:Fe/Ag planar structure. A mechanism involving the space charge limited current combined with Schottky conduction at the metal/oxide interface is proposed. A possible mechanism of the formation and rupture of conducting filament is proposed based on the Joule heating effect with external electron injection at the Ag/SnO2 interface.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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