Raman Study of CVD Graphene Irradiated by Swift Heavy Ions

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Title	Raman Study of CVD Graphene Irradiated by Swift Heavy Ions
Authors	Kolesov, E.A. Tivanov, M.S. Korolik, O.V. Apel, P.Yu. Skuratov, V.A. Saad, A.M. Komissarov, I.V. Swic, A. Żukowski, P.V. Koltunowicz, T.N.
ORCID
Keywords	Irradiated graphene Defects Raman spectroscopy CVD Swift heavy ions
Type	Article
Date of Issue	2017
URI	http://essuir.sumdu.edu.ua/handle/123456789/65870
Publisher	Sumy State University
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Citation	Raman Study of CVD Graphene Irradiated by Swift Heavy Ions [Текст] / E.A. Kolesov, M.S. Tivanov, O.V. Korolik [et al.] // Журнал нано- та електронної фізики. - 2017. - Т.9, № 3. - 03020. - DOI: 10.21272/jnep.9(3).03020.
Abstract	CVD-graphene on silicon was irradiated by accelerated heavy ions (Xe, 160 MeV, fluence of 1011 cm-2) and characterized by Raman spectroscopy. The defectiveness of pristine graphene was found to be dominated by grain boundaries while after irradiation it was determined by both grain boundaries and vacancies. Respectively, average inter-defect distance decreased from ~ 24 to ~ 13 nm. Calculations showed that the ion irradiation resulted in a decrease in charge carrier mobility from ~ 4.0 × 103 to ~ 1.3·103 cm2/V s. The results of the present study can be used to control graphene structure, especially vacancies concentration, and charge carrier mobility.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)