Small Signal Parameter Extraction of III-V Heterojunction Surrounding Gate Tunnel Field Effect Transistor

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Title	Small Signal Parameter Extraction of III-V Heterojunction Surrounding Gate Tunnel Field Effect Transistor
Authors	Manjula, Vijh Gupta, R.S. Sujata, Pandey
ORCID
Keywords	Gate All Around Tunnel FET Heterojunction Small signal parameters Broken-gap
Type	Article
Date of Issue	2017
URI	http://essuir.sumdu.edu.ua/handle/123456789/65929
Publisher	Sumy State University
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Citation	Manjula, Vijh Small Signal Parameter Extraction of III-V Heterojunction Surrounding Gate Tunnel Field Effect Transistor [Текст] / Vijh Manjula, R.S. Gupta, Sujata Pandey // Журнал нано- та електронної фізики. – 2017. – Т.9, № 4. – 04004. – DOI: 10.21272/jnep.9(4).04004.
Abstract	This work presents simulation study and analysis of nanoscale III-V Heterojunction Gate All Around Tunnel Field Effect Transistor, along with the extraction of small signal parameters of the device. Transfer characteristics and output characteristics of the device were observed. The device is simulated for extraction of small signal parameters such as transconductance, gate-source capacitance, gate-drain capacitance, by varying doping concentration of drain region and channel length. Cut-off frequency of the device is also obtained. The results reported agree well with the data available in literature.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)