Study and Analysis of SBD Detector Sensitivity Based on Au-InP and Au-GaAs Structures

Reguieg, K.; Souar, Z.; Becharef, R.

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/65933

Or use following links to share this resource in social networks: Recommend this item

Title	Study and Analysis of SBD Detector Sensitivity Based on Au-InP and Au-GaAs Structures
Authors	Reguieg, K. Souar, Z. Becharef, R.
ORCID
Keywords	SBD Sensitivity Detection Characterization
Type	Article
Date of Issue	2017
URI	http://essuir.sumdu.edu.ua/handle/123456789/65933
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Reguieg, K. Study and Analysis of SBD Detector Sensitivity Based on Au-InP and Au-GaAs Structures [Текст] / K. Reguieg, Z. Souar, R. Becharef // Журнал нано- та електронної фізики. – 2017. – Т.9, № 4. – 04006. – DOI: 10.21272/jnep.9(4).04006.
Abstract	In this paper, a novel approach of materials combination is proposed to enhance the performance of Schottky Barrier Diodes (SBD) detector. High purity of gold (90 %) in combination with two different semiconductors (Indium Phosphide (InP) and Gallium Arsenide (GaAs)) are used to perform SBD samples. The current saturation and ideality factor were extracted from experimental current-voltage characterization, the results insure interesting values. Our sample’s conductivity has been studied and confirm asymmetric in its shape. The analysis of maximum level of current sensitivity for both samples prove their peak value in the nonlinear range of SBD, thus Au-InP gives maximum sensitivity equal to 27.96 A/W and Au-GaAs has a maximum sensitivity equal to 49.33 A/W, which makes them successfully useful for detection in comparison to other works in this domain.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)