Impact of SWCNT Band Gaps on the Performance of a Ballistic Carbon Nanotube Field Effect Transistors (CNTFETs)

Devi, Dass; Rakesh, Vaid

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Title	Impact of SWCNT Band Gaps on the Performance of a Ballistic Carbon Nanotube Field Effect Transistors (CNTFETs)
Authors	Devi, Dass Rakesh, Vaid
ORCID
Keywords	Band gap SWCNT CNTFET Fettoy Gate dielectric thickness
Type	Article
Date of Issue	2017
URI	http://essuir.sumdu.edu.ua/handle/123456789/65934
Publisher	Sumy State University
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Citation	Devi, Dass Impact of SWCNT Band Gaps on the Performance of a Ballistic Carbon Nanotube Field Effect Transistors (CNTFETs) [Текст] / Dass Devi, Vaid Rakesh // Журнал нано- та електронної фізики. – 2017. – Т.9, № 4. – 04007. – DOI: 10.21272/jnep.9(4).04007.
Abstract	Band gap is an important property in designing single-walled carbon nanotube (SWCNT) for nanoelectronic devices. This paper describes the impact of SWCNT band gaps on the performance of a ballistic carbon nanotube field effect transistor (CNTFET) using the 2D numerical simulator. The results demonstrate that with the reduction in SWCNT band gap the performance parameters such as transconductance, output conductance, Ion/Ioff current ratio, gain, and carrier injection velocity enhanced while the short channel effects subthreshold slope and drain-induced barrier lowering get suppressed. The enhanced device performance and reduced short channel effects of CNTFET with the reduction in SWCNT band gaps signifying that the CNTFET is a suitable nanoelectronic device for amplification purposes, low power analog and digital circuits, high-speed and low power applications.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)