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Title | Electrical Performance of Zinc Oxide Thin Films Transistors |
Authors |
Ondo-Ndong, R.
Essone-Obame, H. Koumba, N. |
ORCID | |
Keywords |
Thin film transistors Properties capacities MIS ZnO |
Type | Article |
Date of Issue | 2017 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/65983 |
Publisher | Sumy State University |
License | Copyright not evaluated |
Citation | Ondo-Ndong, R. Electrical Performance of Zinc Oxide Thin Films Transistors [Текст] / R. Ondo-Ndong, H. Essone-Obame, N. Koumba // Журнал нано- та електронної фізики. – 2017. – Т.9, № 6. – 06002. – DOI: 10.21272/jnep.9(6).06002 . |
Abstract |
The capacitive properties and performance of ZnO (TFT) thin film transistors prepared at 100°C were
studied. The ZnO thin films were deposited by rf magnetron sputtering on silicon substrates. The frequency
dependence of the conductivity and the capacity of the ZnO thin films was studied in the frequency
range from 5 kHz to 13 MHz. Shown that total conductivity increases with frequency and decreases with
temperature. This shows that the thermally activated conduction mechanism maintains the correlated
barrier of the charge carrier on the localized states as a function of the experimental data. Activation energy
is in the range of literature. ZnO-based transistors (TFTs) show non-linearities in both the current voltage
and the transfer characteristics which are explained due to the presence of trap states. These traps
cause a reversible threshold voltage change as revealed by low frequency capacitance voltage measurements
in metal insulating semiconductor (MIS) capacitors. Thermal degradation experiments in heterojunctions
confirm the presence of a trap state at 0.32 eV. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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File | Size | Format | Downloads |
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JNEP_06002_5.pdf | 523.7 kB | Adobe PDF | 1143553745 |
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