Effects of Stone-Wales Defect Position in Graphene Nanoribbon Field-Effect Transistor

Owlia, H.; Keshavarzi, P.; Nasrollahnejad, M.B.

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Title	Effects of Stone-Wales Defect Position in Graphene Nanoribbon Field-Effect Transistor
Authors	Owlia, H. Keshavarzi, P. Nasrollahnejad, M.B.
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Keywords	Device simulation Graphene nanoribbon field-effect transistor (GNRFET) Non-equilibrium Green's function (NEGF) Stone-Wales defect
Type	Article
Date of Issue	2017
URI	http://essuir.sumdu.edu.ua/handle/123456789/65991
Publisher	Sumy State University
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Citation	Owlia, H. Effects of Stone-Wales Defect Position in Graphene Nanoribbon Field-Effect Transistor [Текст] / H. Owlia, P. Keshavarzi, M.B. Nasrollahnejad // Журнал нано- та електронної фізики. – 2017. – Т.9, № 6. – 06008. – DOI: 10.21272/jnep.9(6).06008.
Abstract	In this paper, the current-voltage characteristics of a double-gated monolayer armchair graphene nanoribbon field-effect transistor (DG-AGNRFET) is investigated by introducing a Stone-Wales (SW) defect. After changing positions of the defect in width and length of the channel, it is found that the SW defect decreases off current and leads to the further reduction of the off current as the defect moves to the edge. However, this defect has not shown a notable impact on the on current. The results have confirmed the possibility of controlling the electron transport of the DG-AGNRFET by defect engineering can be useful to extend the applications of graphene nanoribbon-based devices. The device has been simulated based on the self-consistent solution of a 3D Poisson-Schrödinger equation using non-equilibrium Green's function (NEGF) formalism.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)