Numerical Simulation and Mathematical Modeling of 3D DG SOI MOSFET with the Influence of Biasing with Back Gate

Neha, Goel; Manoj, Kumar Pandey

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Title	Numerical Simulation and Mathematical Modeling of 3D DG SOI MOSFET with the Influence of Biasing with Back Gate
Authors	Neha, Goel Manoj, Kumar Pandey
ORCID
Keywords	Fully Depleted Silicon on insulator (FDSOI) 3D analytical model Short channel effects (SCE) Bulk CMOS Surface potential Threshold voltage Drain induced barrier lowering (DIBL)
Type	Article
Date of Issue	2017
URI	http://essuir.sumdu.edu.ua/handle/123456789/65996
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Neha, Goel Numerical Simulation and Mathematical Modeling of 3D DG SOI MOSFET with the Influence of Biasing with Back Gate [Текст] / Neha Goel, Manoj Kumar Pandey // Журнал нано- та електронної фізики. - 2017. - Т.9, № 5. - 05002. - DOI: 10.21272/jnep.9(5).05002.
Abstract	Design consideration of a fully depleted SOI (Silicon-On-Insulator) MOSFET device by three dimensional mathematical modeling is presented in this paper. To the best of our knowledge, when our device is fabricated in nanometer regime, the threshold voltage changes due to various effects. Back gate voltage plays a significant role on the controlling of threshold voltage. Separation of variable is used to solve the Poisson’s three dimensional equation, analytically with suitable boundary conditions for the threshold voltage of double gate SOI MOSFET with the influence of biasing with back gate. In this work, changes in threshold voltage has been calculated and demonstrated that how short channel effects and DIBL can be suppressed with application of Back Gate bias voltage.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)