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Title | Optimisation of Doped Antimony Sulphide (Sb2S3) Thin Films for Enhanced Device Applications |
Authors |
Nwofe, P.A.
Chukwu, J.N. |
ORCID | |
Keywords |
Energy scarcity Semiconductor Thin film solar cell Antimony sulphide Doping Optoelectronics |
Type | Article |
Date of Issue | 2017 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/66011 |
Publisher | Sumy State University |
License | Copyright not evaluated |
Citation | Nwofe, P.A. Optimisation of Doped Antimony Sulphide (Sb2S3) Thin Films for Enhanced Device Applications [Текст] / P.A. Nwofe, J.N. Chukwu // Журнал нано- та електронної фізики. - 2017. - Т.9, № 5. - 05007. - DOI: 10.21272/jnep.9(5).05007. |
Abstract |
Energy scarcity is ubiquitous, and more acute in developing nations. Diversification of energy sources
toward renewable energy is one of the world major approach in solving this problem. Thin film solar cells is
universally recognized as one of the best way forward, thus investigation of low cost, non toxic inorganic
materials for use in absorber and window layers in thin film photovoltaic solar cell devices will play a significant
role in that regard. Thin films of antimony sulphide were grown using the solution growth technique.
The films were doped with nickel impurities and annealed at annealing temperatures in the range
50 °C to 200 °C, with the annealing time fixed for 1 hour. The films were characterised using X-ray diffractometry
to investigate the structural properties and UV-spectroscopy to investigate the optical properties,
thus enabling to evaluate the optical constants (optical absorption coefficient, energy bandgap, refractive
index, extinction coefficient, optical density, dielectric constants etc). The results from the structural analysis
indicate that the films are mostly amorphous, and exhibited a polycrystalline form at an annealing
temperature of 150 °C. The optical analysis show that the optical absorption coefficient were > 104 cm – 1,
the energy bandgap was direct with values in the range 2.26 eV to 2.52 eV. The results of the optical studies
(direct energy bandgap, values of the energy bandgap and low resistivity) indicate that the films will be
utilised as window layers in solar cell devices and in other optoelectronic applications. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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File | Size | Format | Downloads |
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JNEP_05007.pdf | 624.16 kB | Adobe PDF | -478846560 |
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