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Title | Structural and Optoelectronic Properties of Nanocrystalline CdTe Thin Films Synthesized by Using SILAR Technique |
Authors |
Swapna, S.
Salunke, D.B. Gosavi, S.R. Patil, R.S. |
ORCID | |
Keywords |
SILAR Cadmium Telluride XRD FESEM Optoelectronic properties |
Type | Article |
Date of Issue | 2017 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/66223 |
Publisher | Sumy State University |
License | Copyright not evaluated |
Citation | Structural and Optoelectronic Properties of Nanocrystalline CdTe Thin Films Synthesized by Using SILAR Technique [Текст] / S. Swapna, D.B. Salunke, S.R. Gosavi, R.S. Patil // Журнал нано- та електронної фізики. - 2017. - Т.9, № 5. - 05028. - DOI: 10.21272/jnep.9(5).05028. |
Abstract |
Nanocrystalline CdTe thin films were deposited on amorphous glass substrate using successive ionic
layer adsorption and reaction (SILAR) technique. The films are characterized using XRD, FESEM, optical
absorption techniques and electrical resistivity measurement. The XRD pattern revealed that nanocrystalline
CdTe thin films has mixed phase of hexagonal and cubic crystal structure. The calculated crystallite
size from the XRD measurement was found to be in the range of 9-12 nm. FESEM image showed uniform
deposition of the material over entire glass substrate and film consists of interconnected spherical grains of
nanometer size. Compositional analysis showed that the nanocrystalline CdTe thin film becomes cadmium
deficient and tellurium richer. The optical absorption studies show that the films have a direct band gap of
1.51 eV. The room temperature resistivity of the synthesized nanocrystalline CdTe films measured by two
probe method was found to 6.64 × 104 Ω.cm. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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