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Title | Short Communication Equivalent Circuit of Betavoltaic Structure on Silicon pn Diode |
Authors |
Nagornov, Yuri S.
|
ORCID | |
Keywords |
charge carriers betavoltaic structure silicon diode equivalent circuit betavoltaics effect |
Type | Article |
Date of Issue | 2018 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/67447 |
Publisher | Sumy State University |
License | Copyright not evaluated |
Citation | Nagornov, Yuri S. Short Communication Equivalent Circuit of Betavoltaic Structure on Silicon pn Diode [Текст] / Yuri S. Nagornov // Журнал нано- та електронної фізики. – 2018. – Т.10, № 1. – 01027. - DOI: 10.21272/jnep.10(1).01027. |
Abstract |
The equivalent circuit of betavoltaics silicon pn diode is proposed. The circuit includes the current
source from betavoltaics effect, ideal pn diode, shunt and series resistances, and also barrier capacity with
charge on it. The model allows to explain that increasing of charge on the surface silicon pn diode must decrease the effectiveness of energy conversion. As example, we showed that the open circuit voltage is decreased during irradiation time from beta source Ni-63 and it rapidly becomes higher after discharging. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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File | Size | Format | Downloads |
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Nagornov_jnep_V10_01027.pdf | 320.39 kB | Adobe PDF | 29727849 |
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