Short Communication Equivalent Circuit of Betavoltaic Structure on Silicon pn Diode

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Title	Short Communication Equivalent Circuit of Betavoltaic Structure on Silicon pn Diode
Authors	Nagornov, Yuri S.
ORCID
Keywords	charge carriers betavoltaic structure silicon diode equivalent circuit betavoltaics effect
Type	Article
Date of Issue	2018
URI	http://essuir.sumdu.edu.ua/handle/123456789/67447
Publisher	Sumy State University
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Citation	Nagornov, Yuri S. Short Communication Equivalent Circuit of Betavoltaic Structure on Silicon pn Diode [Текст] / Yuri S. Nagornov // Журнал нано- та електронної фізики. – 2018. – Т.10, № 1. – 01027. - DOI: 10.21272/jnep.10(1).01027.
Abstract	The equivalent circuit of betavoltaics silicon pn diode is proposed. The circuit includes the current source from betavoltaics effect, ideal pn diode, shunt and series resistances, and also barrier capacity with charge on it. The model allows to explain that increasing of charge on the surface silicon pn diode must decrease the effectiveness of energy conversion. As example, we showed that the open circuit voltage is decreased during irradiation time from beta source Ni-63 and it rapidly becomes higher after discharging.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)