Implantation of Ta Ions Into a Copper Single Crystal (100) And (111)

Abstract

High-dose implantation (up to 1017 cm-2) of tantalum ions into a copper single crystal has been investigated. Irradiation of the copper crystals was performed in two different planes: (100) and (111). The maximum concentration of the tantalum atoms 5 at. % was observed for sample Cu (100). The Ta concentration in the Cu (111) surface after irradiation was only 1 at.%. Tantalum implantation was accompanied by surface carbonization and oxidation. Carbon and oxygen atoms were presented in the residual atmosphere of vacuum camber. The concentration of carbon and oxygen atoms on the surface reached 50 at. %. The microhardness of irradiated samples was ~ 30% higher than for untreated one. Also corrosion resistance enhancement was observed for implanted crystal. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/684