Transport Phenomena for Development Inductive Elements Based on Silicon Wires

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Title	Transport Phenomena for Development Inductive Elements Based on Silicon Wires
Authors	Druzhinin, A.A. Ostrovskii, I.P. Khoverko, Yu.M. Koretskyy, R.M. Chernetskiy, M.Yu.
ORCID
Keywords	silicon wires impedance spectroscopy metal-insulator transition inductive element
Type	Article
Date of Issue	2018
URI	http://essuir.sumdu.edu.ua/handle/123456789/68421
Publisher	Sumy State Universität
License	Copyright not evaluated
Citation	Transport Phenomena for Development Inductive Elements Based on Silicon Wires [Текст] / A.A. Druzhinin, I.P. Ostrovskii, Yu.M. Khoverko [et al.] // Журнал нано- та електронної фізики. - 2018. - Т.10, №2. - 02038. - DOI: 10.21272/jnep.10(2).02038.
Abstract	Conductance and magnetoresistance of Si < B > whiskers with diameters 5-40 µm doped with boron impurity were investigated in temperature range 4.2 ÷ 300 К, frequency range 1÷ 10 Hz and magnetic fields with intensity up to 14 Т by method of impedance spectroscopy. Hopping conductance on impurity states was shown to be realized in the crystals in low temperature region. The studies allow us to obtain parameters of hopping conduction. On the basis of experimental results a miniature inductive element was created using silicon wire.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)