Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/68639
Or use following links to share this resource in social networks: Recommend this item
Title Modelling Graphene-based Transparent Electrodes for Si Solar Cells by Artificial Neural Networks
Authors Meziani, Z.
Dibi, Z.
ORCID
Keywords graphene
transparent electrodes
indium tin oxide
si solar cells
ANN model
Type Article
Date of Issue 2018
URI http://essuir.sumdu.edu.ua/handle/123456789/68639
Publisher Sumy State University
License
Citation Meziani, Z. Modelling Graphene-based Transparent Electrodes for Si Solar Cells by Artificial Neural Networks [Текст] / Z. Meziani, Z. Dibi // Журнал нано- та електронної фізики. - 2018. - Т. 10, № 2. - 02021. - DOI: 10.21272/jnep.10(2).02021.
Abstract Transparent electrodes based on conductive transparent oxides (TCO) are increasingly invading the photovoltaic (PV) field because of their unique ability to reconcile high transparency with good electrical conductivity. The TCO market is dominated by the Indium oxide doped with Tin (ITO) with a resistivity of 30-80 Ω/sq and a transmittance of 90 % in the visible range. Yet, its cost is rising due to the high indium content, is one of the reason that encouraging research on alternative materials essential for the development of PV technologies. It is in this theme that graphene, a material with exceptional properties, is tested as a design material for transparent electrodes for Si solar cells. In this paper, we optimized optically and electronically the graphene-based transparent electrodes (G-TE) by proposing a model of simulation based on artificial intelligence and specifically artificial neural networks (ANN) which is the ANN-model. Therefore, to achieve an appropriate characterisation of a behaviour of G-TE for the Si solar cells, the ANN model has been performed to simulate and optimise different parameters of the G-TE, by controlling graphene layer number, tuning graphene work function, and deduce the suitable transmittance and resistivity in order to have a complete adjustment for these parameters. Our study mentioned that a G-TE with three layers of graphene and a work function of 4.75 eV leads for a sheet resistance of 50 Ω/sq and transmittance of 91.4 %; these results suggest that G-TE is a promising candidate in the TCO field.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

Views

Algeria Algeria
1
Australia Australia
1
China China
1
Germany Germany
1
Greece Greece
1
Ireland Ireland
4305
Lithuania Lithuania
1
Netherlands Netherlands
277
Singapore Singapore
1
Sweden Sweden
1
Ukraine Ukraine
55000
United Kingdom United Kingdom
27778
United States United States
882249
Unknown Country Unknown Country
54999
Vietnam Vietnam
1111

Downloads

Algeria Algeria
738768
Germany Germany
1
Hong Kong SAR China Hong Kong SAR China
1
India India
1
Lithuania Lithuania
1
Singapore Singapore
1
Ukraine Ukraine
164862
United Kingdom United Kingdom
1
United States United States
882251
Unknown Country Unknown Country
6
Vietnam Vietnam
1

Files

File Size Format Downloads
Meziani_modelling.pdf 529.19 kB Adobe PDF 1785894

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.