Effect of Intrinsic Layer Thickness on PIN Structure for Tandem Solar Cell Based on Indium Gallium Nitride Using AMPS -1D

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Title	Effect of Intrinsic Layer Thickness on PIN Structure for Tandem Solar Cell Based on Indium Gallium Nitride Using AMPS -1D
Authors	Souilah, O. Benzair, A. Dennai, B. Khachab, H.
ORCID
Keywords	solar cell tandem simulation PIN structure AMPS-1D efficiency InGaN
Type	Article
Date of Issue	2018
URI	http://essuir.sumdu.edu.ua/handle/123456789/70909
Publisher	Sumy State University
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Citation	Effect of Intrinsic Layer Thickness on PIN Structure for Tandem Solar Cell Based on Indium Gallium Nitride Using AMPS -1D [Текст] / O. Souilah, A. Benzair, B. Dennai, H. Khachab // Журнал нано- та електронної фізики. - 2018. - Т.10, № 4. - 04013. - DOI: 10.21272/jnep.10(4).04013.
Abstract	In this work we have studied The effect of thickness of the intrinsic layer in the PIN structure of InGaN tandem solar cells such as photo generation rate, efficiency and recombination rate through the cells. Improvement around of 13 % of PIN tandem solar cell over PN tandem solar cell is observed for low doping concentration (NA = 1016 cm – 3; ND = 1018 cm – 3) and surface recombination (103cm/s). The photo-generated shortcircuit current density (Jsc) and the open-circuit voltage (Voc) of structures under AM 1,5G (one sun) illumination, are simulated for different thickness of intrinsic layer varying from 50 nm to 350 nm.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)