A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs

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Title	A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs
Authors	Djerioui, M. Hebali, M. Chalabi, D. Saidane, A.
ORCID
Keywords	Symmetrical DG SOI MOSFET Poisson’s equation Electrostatic potential Numerical method
Type	Article
Date of Issue	2018
URI	http://essuir.sumdu.edu.ua/handle/123456789/71363
Publisher	Sumy State University
Citation	A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs / M. Djerioui, M. Hebali, D. Chalabi, A. Saidane // Журнал нано- та електронної фізики. - 2018. - Т.10, № 4. - 04027. - DOI: 10.21272/jnep.10(4).04027
Abstract	To determine electrostatic potentials in silicon channel of undoped DG SOI MOSFET devices, a graphical approach is proposed. The method keeps close to experimental reality by taking into account flat band potential at reduced channel lengths up to 25 nm. This graphical method solves a transcendental equation of Poisson’s equation to obtain electrostatic potentials at center and surface of device as a function gate and drain bias voltages.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)