A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs

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Title	A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs
Authors	Djerioui, M. Hebali, M. Chalabi, D. Saidane, A.
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Keywords	Symmetrical DG SOI MOSFET Poisson’s equation Electrostatic potential Numerical method
Type	Article
Date of Issue	2018
URI	http://essuir.sumdu.edu.ua/handle/123456789/71363
Publisher	Sumy State University
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Citation	A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs / M. Djerioui, M. Hebali, D. Chalabi, A. Saidane // Журнал нано- та електронної фізики. - 2018. - Т.10, № 4. - 04027. - DOI: 10.21272/jnep.10(4).04027
Abstract	To determine electrostatic potentials in silicon channel of undoped DG SOI MOSFET devices, a graphical approach is proposed. The method keeps close to experimental reality by taking into account flat band potential at reduced channel lengths up to 25 nm. This graphical method solves a transcendental equation of Poisson’s equation to obtain electrostatic potentials at center and surface of device as a function gate and drain bias voltages.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)