Charge Based Quantization Model for Triple-Gate FINFETS

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Title	Charge Based Quantization Model for Triple-Gate FINFETS
Authors	Vimala, P.
ORCID
Keywords	Analytical Model Tri-Gate MOSFET Poisson’s equation Drain current model Transconductance C-V curve
Type	Article
Date of Issue	2018
URI	http://essuir.sumdu.edu.ua/handle/123456789/71483
Publisher	Sumy State University
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Citation	Vimala, P. Charge Based Quantization Model for Triple-Gate FINFETS / P. Vimala // Журнал нано- та електронної фізики. - 2018. - Т.10, № 5. - 05015. - DOI: 10.21272/jnep.10(5).05015
Abstract	In this article we have developed an analytical model for Tri gate Metal oxide semiconductor field effect transistor (MOSFET) by including quantum effects. The coupled Schrödinger and Poisson’s equation is solved using variational approach to develop an analytical quantum model. An analytical model for charge centroid is obtained and then inversion charge model is developed with quantum effects by means of oxide capacitance for different channel thickness and gate oxide thickness. The compact model is shown to reproduce transfer characteristics, transconductance and C-V curve of tri gate MOSFET using the model. The modeled results are then compared to the simulated results. The comparison shows the accuracy of the proposed model.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)