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Title | Structural and Optoelectronic Properties of Polycrystalline CdS Thick Film Prepared by Screen Printing |
Authors |
Bagul, B.Y.
Sonawane, P.S. Shaikh, A.Z. Rane, Y.N. Gosavi, S.R. |
ORCID | |
Keywords |
II-VI semiconductors metal chalcogenide thick film optical properties electrical properties |
Type | Article |
Date of Issue | 2018 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/71496 |
Publisher | Sumy State University |
License | Copyright not evaluated |
Citation | Structural and Optoelectronic Properties of Polycrystalline CdS Thick Film Prepared by Screen Printing / B.Y. Bagul, P.S. Sonawane, A.Z. Shaikh [et al.] // Журнал нано- та електронної фізики. - 2018. - Т.10, № 5. - 05018. - DOI: 10.21272/jnep.10(5).05018 |
Abstract |
The paper describes structural, optical and electrical properties of CdS thick film prepared by using screen printing method. For the preparation of CdS thick film, powder of CdS nanoparticles was prepared by using chemical precipitation method using cadmium acetate and sodium sulfide as a source of Cd and S respectively. XRD pattern confirms the formation of pure hexagonal CdS phase with crystallite size of the order of 19.41 nm and 21.14 nm respectively, for as prepared and annealed CdS thick films. The surface morphology studies shows that the films covered with spherical grains uniformly distributed over the substrate free from crack and pinholes where as elemental analysis revealed the presence of Cd and S elements in the prepared film. The absorption spectra of as prepared and sintered CdS thick film were recorded by using JASCO V-630 spectrophotometer in the wavelength range of 400-900 nm from which energy band gap has been determined and is found to be 2.47 eV and 2.39 eV for as prepared and sintered CdS thick film, respectively. Electrical analysis showed the semiconducting behavior of the prepared material. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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