Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

Patil, Pramod J.; Ahir, Namita A.; Yadav, Suhas; Revadekar, Chetan C.; Khot, Kishorkumar V.; Kamat, Rajanish K.; Dongale, Tukaram D.; Kim, Deok-kee

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Title	Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices
Authors	Patil, Pramod J. Ahir, Namita A. Yadav, Suhas Revadekar, Chetan C. Khot, Kishorkumar V. Kamat, Rajanish K. Dongale, Tukaram D. Kim, Deok-kee
ORCID
Keywords	simulation resistive memory thermal reaction model ZrO2
Type	Article
Date of Issue	2020
URI	https://essuir.sumdu.edu.ua/handle/123456789/77355
Publisher	Sumy State University
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Citation	Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices [Текст] / Pramod J. Patil, Namita A. Ahir, Suhas Yadav [et al.] // Журнал нано- та електронної фізики. – 2020. – Т. 12, № 2. – 02008. – DOI: 10.21272/jnep.12(2).02008.
Abstract	In the present work, the effect of reset voltage, filament radius, filament resistivity, and oxide membrane thickness on the nanoscale ZrO2 RRAM devices was reported. The present investigation is based on the thermal reaction model of RRAM. The outcomes show a decline in saturated temperature with a rise in the radius and resistivity of filament. Furthermore, increases in saturated temperature with an increase in oxide membrane thickness were observed for the ZrO2 based RRAM device. The saturated temperature of the device was mainly influenced by reset voltage, oxide layer thickness, filament size, and filament resistivity. The simulation results of the present investigation can be beneficial for the optimization of RRAM devices.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)