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Title Deposition and Characterization of Indium Selenide Thin Films for Opto-electronic Devices
Authors Raval, Adhish V.
Shaikh, I.A.
Jain, V.M.
Shastri, N.M.
Patel, P.B.
Saini, L.K.
Shah, D.V.
ORCID
Keywords InSe
thin film
drop-casting
absorber layer
opto-electronic devices
Type Article
Date of Issue 2020
URI https://essuir.sumdu.edu.ua/handle/123456789/77361
Publisher Sumy State University
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Citation Deposition and Characterization of Indium Selenide Thin Films for Opto-electronic Devices [Текст] / Adhish V. Raval, I.A. Shaikh, V.M. Jain [et al.] // Журнал нано- та електронної фізики. – 2020. – Т. 12, № 2. – 02010. – DOI: 10.21272/jnep.12(2).02010.
Abstract Amongst all the III-VI semiconductors, ones that crystallize with a layered structure have gained special interest due to its significant usage in photovoltaic devices. III-VI layered semiconductor such as InSe has low density of dangling bonds on its surface therefore it is considered as vital material for the fabrication of opto-electronic devices like photo sensor, solar cell etc. In present work, InSe thin films were fabricated through a simple and facile drop-casting method, where the thin films were drop-casted between two silver paste electrodes on a glass substrate. The structural, surface morphological, compositional, electrical and optical properties of the prepared films were obsrved by XRD, SEM, EDAX, high precision digital multi-meter and UV-visible spectroscopy, respectively. XRD analysis of the prepared film shows the existence of nano-crystalline nature with monoclinic crystal structure of InSe. SEM images show good continuity of InSe film. InSe thin films are n-type with bandgap of 1.8 eV and their electrical conductivity is in the order of 10 – 10 S/cm that makes them appropriate for using as an absorber layer in the solar cell.
Appears in Collections: Журнал нано- та електронної фізики (Journal of nano- and electronic physics)

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