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Title | Resistive Switching Characteristics of Electrochemically Anodized Sub-stoichiometric Ti6O Phase |
Authors |
Nirmal, Kiran A.
Killedar, Shirish T. Desai, Trishala R. Khot, Kishorkumar V. Kamat, Rajanish K. Dongale, Tukaram D. Kim, Deok-kee |
ORCID | |
Keywords |
Ti6O electrochemical anodization resistive switching memristive device |
Type | Article |
Date of Issue | 2020 |
URI | https://essuir.sumdu.edu.ua/handle/123456789/77380 |
Publisher | Sumy State University |
License | Copyright not evaluated |
Citation | Resistive Switching Characteristics of Electrochemically Anodized Sub-stoichiometric Ti6O Phase [Текст] / Kiran A. Nirmal, Shirish T. Killedar, Trishala R. Desai [et al.] // Журнал нано- та електронної фізики. – 2020. – Т. 12, № 2. – 02029. – DOI: 10.21272/jnep.12(2).02029. |
Abstract |
We have developed Ti6O thin film using the electrochemical anodization approach for resistive switching (RS) application. The effect of anodization time (1 h, 2 h and 3 h) on the RS/memristive properties was investigated. The structural analysis was carried out by using the XRD technique, which reveals that the formation of the sub-stoichiometric Ti6O phase. The scanning electron microscopy image reveals that the thin film has compact and porous surface morphology. The electrical results clearly show bipolar RS in Al/Ti6O/Ti device. The boost in the RS properties was achieved by increasing the anodization time. The basic memristive properties were calculated using experimental I-V data. The Schottky, Hopping and Ohmic charge transport mechanisms contribute to the conduction, whereas the filamentary effect controls the RS process of the Al/Ti6O/Ti memristive devices. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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Kiran_A_Nirmal_JNEP_2_2020.pdf | 802.41 kB | Adobe PDF | 607722437 |
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