Resistive Switching Memory Properties of Electrodeposited Cu2O Thin Films

Patil, Rohini R.; Patil, Shubham V.; Sabnis, Amey M.; Khot, Kishorkumar V.; Kamat, Rajanish K.; Dongale, Tukaram D.; Kim, Deok-kee

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Title	Resistive Switching Memory Properties of Electrodeposited Cu2O Thin Films
Authors	Patil, Rohini R. Patil, Shubham V. Sabnis, Amey M. Khot, Kishorkumar V. Kamat, Rajanish K. Dongale, Tukaram D. Kim, Deok-kee
ORCID
Keywords	electrodeposition Cu2O resistive switching memristor
Type	Article
Date of Issue	2020
URI	https://essuir.sumdu.edu.ua/handle/123456789/77390
Publisher	Sumy State University
License	Copyright not evaluated
Citation	Resistive Switching Memory Properties of Electrodeposited Cu2O Thin Films [Текст] / Rohini R. Patil, Shubham V. Patil, Amey M. Sabnis [et al.] // Журнал нано- та електронної фізики. – 2020. – Т. 12, № 2. – 02035. – DOI: 10.21272/jnep.12(2).02035.
Abstract	The Cu2O thin film was developed using an electrodeposition approach for resistive memory application. The impact of the deposition voltage (1V, 2V, 3V, and 4V) on resistive switching (RS)/memristive properties of Cu2O thin films was studied. The XRD spectrum reveals that deposited Cu2O has a cubic crystal structure. The bipolar RS in Al/Cu2O/FTO device was clearly observed during the current-voltage (I-V) measurement. The basic memristive properties were calculated from I-V data. The charge transport studies suggested that the SCLC mechanism was responsible for device conduction, and RS was due to filamentary effect. The result suggested that the electrodeposition technique is useful to fabricate a memristive device for various applications.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)