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Title | Influence of Tunable Work Function on SOI-based DMG Multi-channel Junctionless Thin Film Transistor |
Authors |
Kumar, S. Ashok
Pravin, J. Charles |
ORCID | |
Keywords |
junctionless tri-gate transistor multi-channel TiN dual metal gate (DMG) thin-film transistor SOI |
Type | Article |
Date of Issue | 2021 |
URI | https://essuir.sumdu.edu.ua/handle/123456789/82578 |
Publisher | Sumy State University |
License | In Copyright |
Citation | S. Ashok Kumar, J. Charles Pravin, J. Nano- Electron. Phys. 13 No 1, 01005 (2021). DOI: https://doi.org/10.21272/jnep.13(1).01005 |
Abstract |
This paper focuses on the effects occurring due to the inclusion of multi-channel titanium nitride (TiN)
material in a dual metal gate (DMG) junctionless (JL) thin film transistor. Two nanosheets have been implemented in a JL tri-gate transistor, which is separated by the gate oxide layer and surrounded by the
gate layer. The thickness of TiN material placed in between the gate oxide and gate layer helps in tuning
the work function of the gate. The comparison has been done between single channel with single metal
gate, double channel with single metal gate, double channel with DMG and double channel with DMG and
TiN. Strains have been created in the devices by implementing TiN and DMG. An improvement of 31 % in
the output current has been obtained using DMG double channel device when compared with single gate
single channel device. The comparison has been carried out in Sentaurus technology computer aided design (TCAD). The drift diffusion model, the mobility model, which includes the effects of doping concentration and electric field, the bandgap narrowing model and the Shockley-Read-Hall recombination model
have been used to calculate outputs. The proposed structure acquires higher transconductance values than
normal tri-gate devices. It has been verified that when varying the TiN thickness, the potential has been
tuned. Due to the tuning of the work function, the performance of the device has been improved. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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S_Ashok_Kumar_jnep_1_2021.pdf | 543.34 kB | Adobe PDF | -1307949223 |
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