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Title | Synthesis and Characterization of ZnO Thin Film for Modeling the Effect of Its Defects on ZnO/Cu2O Solar Cell EQE |
Authors |
Chala, S.
Boumaraf, R. Bouhdjar, A.F. Bdirina, M. Labed, M. Taouririt, T.E. Elbar, M. Sengouga, N. Yakuphanoğlu, F. Rahmane, S. Naoui, Y. Benbouzid, Y. |
ORCID | |
Keywords |
sol-gel EQE defects simulation ZnO/Cu2O solar cell |
Type | Article |
Date of Issue | 2021 |
URI | https://essuir.sumdu.edu.ua/handle/123456789/82583 |
Publisher | Sumy State University |
License | In Copyright |
Citation | S. Chala, R. Boumaraf, et al., J. Nano- Electron. Phys. 13 No 1, 01009 (2021). DOI: https://doi.org/10.21272/jnep.13(1).01009 |
Abstract |
Zinc oxide (ZnO) is one of the best transparent conducting oxide (TCO) materials with a wide bandgap
and good electrical and optical properties. Its low cost, nontoxicity and transparency in the optical region of
the electromagnetic spectrum make it very promising candidate for solar cell applications. In this work,
zinc acetate precursor was used to grow a ZnO thin film by using sol-gel spin-coating technique. The surface morphological study using scanning electron microscope (SEM) was carried out to confirm the growth
pattern and crystal distribution. The optical properties, transmission (T), reflection (R), optical bandgap
(Eg), refractive index (n), and extinction coefficient (k) were extracted and investigated to be used in the
simulation of ZnO/Cu2O heterostructure solar cell, where ZnO thin film plays a double role: as the TCO
window, as well as the emitter of the n-p junction. However, the solar cell showed weak external quantum
efficiency (EQE) compared to those prepared by using zinc nitrate and diethyl zinc precursors. TCAD numerical simulation was used to clarify the origin of this weak EQE by taking into account two parameters. The
first studied parameter is the root-mean-square interface roughness, σRMS, in Haze modeling approach, H,
which describes how much of incident light is scattered at the interface. The second studied parameter is the
density of defects in the ZnO bulk with continuous distribution of states in its bandgap similar to an amorphous semiconductor made of tail bands and Gaussian distribution deep level bands. Consequently, and by
adjusting and investigating the effect of the σRMS and the constituents of the bandgap states, we were able to
obtain a good agreement between simulated and measured EQE characteristics of the solar cell. |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
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