Single Electron Transistor Based Current Mirror: Modelling and Performance Characterization

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Title	Single Electron Transistor Based Current Mirror: Modelling and Performance Characterization
Authors	Vidhate, Ashok.D. Suman, Shruti
ORCID
Keywords	self-biased current mirror MOS current mirror nano-scale MOSFET power dissipation CMOS integrated circuit amplifier single electron transistor coulomb blockade cascode current mirror
Type	Article
Date of Issue	2021
URI	https://essuir.sumdu.edu.ua/handle/123456789/82590
Publisher	Sumy State University
License	In Copyright
Citation	Ashok.D. Vidhate, Shruti Suman, J. Nano- Electron. Phys. 13 No 1, 01017 (2021). DOI: https://doi.org/10.21272/jnep.13(1).01017
Abstract	Current mirror is basic building block of amplifier, oscillator and comparator circuit. An ideal current mirror is independent of input power and temperature. The output current is constant mirrored image of input current. In order to avoid wrong equilibrium it must have high output impedance. This can be achieved by using super cascode formation. The single electron coulomb blockade structure provides low voltage operation and scaling of transistor to 10 nm. The Single Electron Transistor (SET) based CM is modeled and analyzed by simulation and the results shows improved performance of CM.
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)