Fabrication Of ZnxCd1 – xSe Nanowires By CVD Process And Photoluminescence Studies

Please use this identifier to cite or link to this item: http://essuir.sumdu.edu.ua/handle/123456789/9545

Or use following links to share this resource in social networks: Recommend this item

Title	Fabrication Of ZnxCd1 – xSe Nanowires By CVD Process And Photoluminescence Studies
Authors	Vijayalakshmi, R.P. Murali, G. Amaranatha Reddy, D. Venugopal, R.
ORCID
Keywords	photoluminescence semicon-ductor nanowires II-VI nanowires
Type	Article
Date of Issue	2011
URI	http://essuir.sumdu.edu.ua/handle/123456789/9545
Publisher	Sumy State University Publishing
License	Copyright not evaluated
Citation	R.P. Vijayalakshmi, G. Murali, D. Amaranatha Reddy, R. Venugopal, J. Nano- Electron. Phys. 3 No1, 140 (2011)
Abstract	ZnxCd1 – xSe alloy nanowires with composition x = 0.2, 0.5 have been successfully synthesized by a simple thermal evaporation on the silicon substrate coated with a gold film of 20 Å thickness. The as-synthesized alloy nanowires, 70 - 150 nm in diameter and several tens of micrometer in length. The nanowires are single crystalline revealed from Transmission electron microscopy (TEM) and XRD measurement. The structure of ZnxCd1 – xSe nanowires are hexagonal wurtzite with [01-10] growth direction. Energy gap of the ZnxCd1 – xSe nanowires are determined from micro photoluminescence measurements. The energy gap increases with increasing Zn concentration. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/9545
Appears in Collections:	Журнал нано- та електронної фізики (Journal of nano- and electronic physics)