Please use this identifier to cite or link to this item:
http://essuir.sumdu.edu.ua/handle/123456789/9672
Or use following links to share this resource in social networks:
Tweet
Recommend this item
Title | Effect Of Annealing On Structure, Morphology, Electrical And Optical Properties Of Nanocrystalline TiO2 Thin Films |
Authors |
Pawar, S.G.
Chougule, M.A. Godse, P.R. Jundale, D.M. Pawar, S.A. Raut, B.T. Patil, V.B. |
ORCID | |
Keywords |
structural properties optical proper-ties electrical conductivity |
Type | Article |
Date of Issue | 2011 |
URI | http://essuir.sumdu.edu.ua/handle/123456789/9672 |
Publisher | Sumy State University Publishing |
License | |
Citation | S.G. Pawar, M.A. Chougule, P.R. Godse, et al., J. Nano- Electron. Phys. 3 No1, 185 (2011) |
Abstract |
Semi-transparent and highly conducting nanostructured titanium oxide thin films have been prepared by sol-gel method. Thin films of TiO2 deposited on glass substrates using spin coating technique and the effect of annealing temperature (400 - 700 °C) on structural, microstructural, electrical and optical properties were studied. The X-ray diffraction and Atomic force microscopy measurements confirmed that the films grown by this technique have good crystalline tetragonal mixed anatase and rutile phase structure and homogeneous surface. The study also reveals that the rms value of thin film roughness increases from 7 to 19 nm. HRTEM image of TiO2 thin film (annealed at 700 °C) shows that a grain of about 50 - 60 nm in size is really aggregate of many small crystallites of around 10 - 15 nm. Electron diffraction pattern shows that the TiO2 films exhibited tetragonal structure. The surface morphology (SEM) of the TiO2 film showed that the nanoparticles are fine with an average grain size of about 50 - 60 nm. The optical band gap slightly decreases from 3.26 - 3.24 eV and the dc electrical conductivity was found in the range of 10-6 to 10-5(Ω·cm)-1 when the annealing temperature is changed from 400 to 700 °C. It is observed that TiO2 thin film annealed at 700 °C after deposition provide a smooth and flat texture suited for optoelectronic applications.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/9672 |
Appears in Collections: |
Журнал нано- та електронної фізики (Journal of nano- and electronic physics) |
Views
Canada
2
China
-1186674967
EU
2
Finland
1
France
465127600
Germany
460
Greece
1
Hong Kong SAR China
1
India
-120503407
Iran
1
Ireland
7356515
Italy
1
Lithuania
465127603
Malaysia
1
Nigeria
1
Palestinian Territories
1
Russia
70
Singapore
1
Slovakia
2
South Korea
-352154125
Spain
1
Sweden
1
Taiwan
159937
Tunisia
1
Turkey
626385
Ukraine
1073304501
United Kingdom
465127598
United States
-2113623933
Unknown Country
-222821242
Vietnam
1
Yemen
1
Downloads
A1
1
Algeria
1
Bangladesh
1
Canada
1
China
465127604
France
1
Germany
-120503409
India
234822011
Iran
358496716
Iraq
1
Lithuania
1
Malaysia
-1048222586
Morocco
1
Palestinian Territories
1
Slovakia
1
South Korea
-352154124
Ukraine
204247
United Kingdom
2185635
United States
-352154127
Unknown Country
413
Files
File | Size | Format | Downloads |
---|---|---|---|
24_effect.PDF | 726.69 kB | Adobe PDF | -812197610 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.