Показаны результаты 1 - 3 из 3
Год выпуска | Название | Автор(ы) | Тип | Просмотров | Загружено |
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2015 | Confined Energy State Based Hypothetical Observations about Device Parameters of AlGaN / GaN HEMT | Das, Palash; Biswas, Dhrubes | Article | 107286858 | 113722226 |
2011 | Gate leakage current reduction with advancement of graded barrier AlGaN/GaN HEMT | Das, Palash; Biswas, Dhrubes | Article | 360236166 | 779246301 |
2011 | New evolving directions for device performance optimization based integration of compound semiconductor devices on silicon | Mukhopadhyay, Partha; Das, Palash; Chang, Edward Y.; Biswas, Dhrubes | Article | 639861266 | -1405696848 |