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| Issue Year | Title | Author(s) | Type | Views | Downloads |
|---|---|---|---|---|---|
| 2019 | BSIM3v3 Characterization and Simulation of MOS Si1 – xGex Transistors with 130 nm Submicron Technology | Hebali, M.; Bennaoum, M.; Benzohra, M.; Chalabi, D.; Saïdane, A. | Article | 1063 | 512 |